Navitas Semiconductor
- El Segundo
California
United States of America - http://www.navitassemi.com
Navitas Semiconductor Inc. is the world’s first and only GaN Power IC company, founded in El Segundo, CA, USA in 2013. Navitas has a strong and growing team of power semiconductor industry experts with a combined 200 years of experience in materials, circuits, applications, systems and marketing, plus a proven record of innovation with over 125 patents among its founders. The proprietary AllGaN™ process design kit monolithically-integrates the highest performance 650V GaN FET and GaN driver capabilities. Navitas GaN Power ICs enable smaller, higher energy efficient and lower cost power for mobile, consumer, enterprise and new energy markets. Over 25 Navitas proprietary patents are granted or pending.
Navitas Semiconductor Articles
NVIDIA, Navitas collaborate on 800 V HVDC architecture
Navitas Semiconductor is collaborating with NVIDIA on their next-generation 800 V HVDC architecture to support ‘Kyber’ rack-scale systems powering their GPUs, such as Rubin Ultra, enabled by GaNFast and GeneSiC power technologies.
Navitas unveils 12kW power supply unit at COMPUTEX
Navitas Semiconductor has announced its latest 12 kW power supply unit (PSU) ‘designed for production’ reference design for hyperscale AI data centres with high-power rack densities of 120 kW.
Navitas hosts ‘AI Tech Night’
Navitas Semiconductor will host an ‘AI Tech Night’ event in Taipei, Taiwan, bringing together industry experts, supply chain partners, and technology developers for keynote speeches, demonstrations, and interactive discussions.
Navitas unveils SiC MOSFETs with AEC-Plus for demanding applications
Navitas introduces a new level of reliability to meet the system lifetime requirements of the most demanding automotive and industrial applications.
Navitas GaNSense ICs for home & industrial applications
Navitas Semiconductor has announced a new family of GaNSense Motor Drive ICs targeting home appliances and industrial drives up to 600W.
Planet Navitas at PCIM 2025
Navitas Semiconductor will be exhibiting several GaN and SiC breakthroughs in AI data centres, EVs, motor drives, and industrial applications at PCIM 2025, running from 6-8 May, 2025.
Navitas’ latest SiCPAK power modules
Navitas has announced the release of its latest SiCPAK power modules with epoxy-resin potting technology, powered by proprietary trench-assisted planar SiC MOSFET technology, that have been rigorously designed and validated for the most demanding high-power environments, prioritising reliability and high-temperature performance.
Navitas announces automotive qualification of high-power GaNSafe ICs
Navitas has announced its high-power GaNSafe ICs achieve automotive qualification for both AEC-Q100 and AEC-Q101, showcasing GaN’s next inflection into the automotive market.
Navitas and GigaDevice will create joint lab
Navitas Semiconductor has announced a new strategic partnership with GigaDevice, to create a joint-lab for integrating and tailoring Navitas’ GaNFast ICs & GigaDevice's microcontrollers, targeting AI data centres, EVs, solar, and energy saving systems.
Navitas and Great Wall partner for 400V-DC power architecture for data centres
Navitas Semiconductor, the pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced its GaNSense power ICs will power GreatWall’s latest 2.5kW ultra-high power density DC-DC converter for AI data centres.
Navitas MOFSETS achieve new energy efficiency
Navitas Semiconductor announced that its high-power GaNSafe and Gen 3 ‘Fast’ SiC MOSFETs enable their portfolio of 3.2kW, 4.5kW, and 8.5 kW AI data center power supply unit (PSU) reference designs to achieve system efficiencies from 96.5% to 98%, accelerating the adoption of cleaner energy server data center PSUs. These reference designs have not yet been granted 80 PLUS Ruby certification by CLEAResult.
Single-stage BDS converters drive paradigm shift in power
Navitas Semiconductor has revealed a breakthrough in the world’s first production-released 650 V bi-directional GaNFast ICs and high-speed isolated gate-drivers, creating a paradigm shift in power with single-stage BDS converters, which enables the transition from two-stage to single-stage topologies.
Navitas wide bandgap developments at APEC 2025
Navitas has announced it will attend APEC 2025 and highlight the latest advances in GaN and SiC wide bandgap technologies for AI data centre EV, and mobile applications.
Navitas’ GaN & SiC devices power Dell’s family of AI notebooks
Navitas Semiconductor has announced its adoption of both technologies into Dell’s family of notebook adapters, from 60 W to 360 W.
Navitas at CES 2025
At CES 2025, Paige West, Managing Editor, Electronic Specifier speaks with Llew Vaughan-Edmunds, Senior Director, Product Management & Marketing (GaN, SiC), Navitas about delivering next-generation solutions for AI datacentres, EVS, and mobile technology.
Navitas showcases GaN and SiC technologies at CES 2025
Navitas Semiconductor will showcase several breakthroughs for AI datac centres, EVs and mobile technology at CES 2025, running in Las Vegas from 7-10 January.
Navitas retains Deloitte’s Fast 500 ranking for third year
Navitas has announced that the company’s revenue growth has been acknowledged for the third consecutive year, by Deloitte’s Technology Fast 500.
8.5kW AI data centre power supply powered by GaN and SiC
Navitas Semiconductor has announced the world’s first 8.5kW power supply unit (PSU), powered by GaN and SiC technologies to achieve 98% efficiency, for next-generation AI and hyperscale data centres.
Navitas GaN and SiC advancements at electronica 2024
Navitas has announced it will preview several breakthroughs at electronica 2024 (Hall C 3, booth 129, November 12th- 15th).
Navitas unveils new digital control technique for AI data centres
At this month’s IEEE Energy Conversion Congress and Expo (ECCE), Navitas Semiconductor is set to debut its innovative ‘IntelliWeave’ control technique.