Power

 TDK's range of standard ferrite cores with distributed air gaps offer designers the opportunity to downsize power supplies whilst at the same time increasing power density.

Navitas Semiconductor is collaborating with NVIDIA on their next-generation 800 V HVDC architecture to support ‘Kyber’ rack-scale systems powering their GPUs, such as Rubin Ultra, enabled by GaNFast and GeneSiC power technologies.

Navitas Semiconductor has announced its latest 12 kW power supply unit (PSU) ‘designed for production’ reference design for hyperscale AI data centres with high-power rack densities of 120 kW.

Littelfuse announces the release of the IXD0579M high-speed gate driver IC. The IXD0579M simplifies board design, saves space, and offers a reliable, multiple-source alternative for driving N-channel MOSFETs or IGBTs in half-bridge configurations.

High-spec cost-effective AC/DC is available in board mount or open-frame options.

Infineon Technologies has announced that it will supply Rivian’s R2 platform with power modules for traction inverters.

Targeting next-generation of display technology, CEA-Leti presented its heterogeneous co-integration of GaN microLED technology and organic photodetectors (OPDs), a major step toward multifunctional displays that combine both display and sensing capabilities.

JFW model 50PD-874 SMA is a resistive type 2-Way power divider/combiner with 50 Ohm impedance. 

Toshiba Electronics Europe announces volume shipments of its 3rd generation, 650V silicon carbide (SiC) MOSFETs in the compact DFN8x8 package for industrial equipment, the TW031V65C, TW054V65C, TW092V65C, and TW123V65C.

Diamond's properties include high thermal conductivity, exceptional carrier mobility, high voltage breakdown, among others, which render transistors that have the capability of operating at high temperatures, voltages, among others. Simultaneously, it also offers higher dissipation of heat and higher energy efficiency.