Vishay launches 80V MOSFET with 0.88mΩ RDS(ON)

With on-resistance down to 0.88mΩ typical at 10V, the device minimises power losses from conduction to increase efficiency while improving thermal performance with a low maximum RthJC of 0.36°C/W. With its 8 x 8mm footprint, the space-saving device occupies 50% less PCB space than MOSFETs in the TO-263 package while offering an ultra-low profile of 1mm.

The SiEH4800EW implements a fused lead to increase the source PAD solderable area to 3.35mm², which is four times larger than a traditional PIN solder area. This decreases the current density between the MOSFET and PCB, reducing the risk of electro-migration risk and enabling a more robust design. In addition, the device's wettable flanks enhance solderability while making it easier to visually inspect the reliability of solder joints.

The MOSFET is ideal for synchronous rectification and OR-ing functionality. Typical applications will include motor drive controls, power tools, welding equipment, plasma cutting machines, battery management systems, robotics, and 3D printers. In these applications, the device offers high temperature operation to +175°C, and its BWL design minimises parasitic inductance while maximising current capability.

RoHS-compliant and halogen-free, the MOSFET is 100% Rg and UIS tested.

Comparison table: D²PAK vs PowerPAK 8 x 8L vs PowerPAK 8 x 8SW

Samples and production quantities of the SiEH4800EW are available now, with lead times of 13 weeks.